In this paper we introduce general numerical analysis for investigation the performance of avalanche photodiodes (APD) while we change the multiplication region mole fraction. We have found that the gain, breakdown voltage, and performance factor, at a given bias voltage, increase while the excess noise factor decreases through the decreases in fraction of Al in AlxGa1−xAs-APDs. For calculation the characteristics of AlxGa1−xAs-APDs we use the dead space multiplication theory (DSMT) and width independent ionization coefficient.
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