A doubly balanced monolithic microwave passive mixer using novel configurations is designed and fabricated through a 0.15 μm GaAs pHEMT process. The configuration of the doubly balanced mixer (DBM) can eliminate the use of two dual baluns for application in the conventional star mixer, as well as make the mixer more compact and simplify IF extraction to obtain wider IF bandwidth up to 15 GHz. From the measured results, the fabricated DBM exhibits wideband performance, superior isolations and high dynamic range.
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