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High Impedance Transforming Dual-Band Balun with Isolation and Output Ports Matching

By Rahul Gupta, Md Hedayatullah Maktoomi, Vikas Vikram Singh, and Mohammad S. Hashmi
Progress In Electromagnetics Research Letters, Vol. 81, 121-126, 2019


A dual-band balun with inherent impedance transformation is presented in this paper. The inherent impedance transformation ratio from a range of 0.4 to 4.0 makes the balun ideal for the on-chip fabrication. The proposed dual-band balun exhibits excellent input port matching, equal output signal with phase di erence of 180, and extremely good isolation and matching at the output ports. A table is provided with the design parameters at the extreme impedance transformation ratios. The design concept of the proposed balun has been validated through a prototype fabricated on a Rogers RO5880 substrate. The measurement results are in good agreement with the EM simulation measurements.


Rahul Gupta, Md Hedayatullah Maktoomi, Vikas Vikram Singh, and Mohammad S. Hashmi, "High Impedance Transforming Dual-Band Balun with Isolation and Output Ports Matching," Progress In Electromagnetics Research Letters, Vol. 81, 121-126, 2019.


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