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A Wideband Gate Mixer Using 0.15 μm GaAs Enhancement-Mode PHEMT Technology

By Xi Wang, Jun Hu, Yongbo Su, Peng Ding, Wuchang Ding, Feng Yang, Asif Muhammad, and Zhi Jin
Progress In Electromagnetics Research Letters, Vol. 84, 7-14, 2019


This paper presents a wideband gate mixer using 0.15 μm GaAs enhancement-mode pseudomorphic high electron mobility transistor (E-mode PHEMT) process. The proposed mixer is based on a single-ended gate mixer topology. Proper input matching networks are used to ensure good conversion gain as well as a wide frequency band. A λ/4 open stub at local oscillator (LO) frequency and a low-pass filter at the drain terminal do great help to enhance LO-IF and RF-IF isolation performance. A Lange coupler is used to maintain LO-RF isolation in a wide frequency band. The measured results show that the mixer operates in wide RF frequency of 17-26 GHz and IF frequency of 0.8-1.7 GHz with a conversion gain of 5-8 dB. The 1 dB compression point (P1 dB) is -1~1 dBm, and the needed LO power is only 1 dBm. The LO-IF, RF-IF, and LO-RF isolations are about 45, 45, and 20 dB, respectively. This represents excellent performance for GaAs PHEMT mixer in terms of frequency bandwidth, conversion gain, isolation, and P1 dB performance.


Xi Wang, Jun Hu, Yongbo Su, Peng Ding, Wuchang Ding, Feng Yang, Asif Muhammad, and Zhi Jin, "A Wideband Gate Mixer Using 0.15 μm GaAs Enhancement-Mode PHEMT Technology," Progress In Electromagnetics Research Letters, Vol. 84, 7-14, 2019.


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