Solid state plasma antenna based on surface PiN diodes is characterized by its wide radiation range, good stealth characteristics, compatibility with traditional microelectronic technology, and dynamic reconfiguration, which has very broad application prospects in the fields of wireless communication, radar, and remote sensing. To improve carrier concentration and uniformity within theintrinsic region, a novel SPiN diode with a double-layer structure is described in this paper. This structure can compensate the concentration attenuation at the midpoint of the `i' region, which makes carriers have a more uniform distribution with high concentration, and carrier concentration within the `i' region twice of the traditional SPiN diode. A Si/Ge/Si heterojunction diode is also researched in this paper. These results indicate that a fully reconfigurable semiconductor plasma antenna based on this novel surface PiN diode is achieved to meet the currently-growing communication requirements.
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