Vol. 113

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2023-11-01

A Scalable Psp RF Model for 0.11 um MOSFETs

By Xiaonian Liu and Yansen Liu
Progress In Electromagnetics Research Letters, Vol. 113, 43-51, 2023
doi:10.2528/PIERL23081405

Abstract

An accurate, efficient and scalable SPICE model is essential for modern integrated circuits design, especially for radio frequency (RF) circuit design. A PSP based scalable RF model is extracted and verified in 0.11 μm CMOS manufacturing process. The S parameter measurement system and open-short de-embedding technique is applied. The macro-model equivalent subcircuit and parameters extraction strategy are discussed. The extracted model can match the de-embedded S parameters data well. By combining the model parameters' dependencies on each geometry quantity, the scalable expression of parameters with all geometry quantities included can be obtained. This work can be a reference for the RF MOSFETs modeling and RF circuit design.

Citation


Xiaonian Liu and Yansen Liu, "A Scalable Psp RF Model for 0.11 um MOSFETs ," Progress In Electromagnetics Research Letters, Vol. 113, 43-51, 2023.
doi:10.2528/PIERL23081405
http://test.jpier.org/PIERL/pier.php?paper=23081405

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